He J., Bian W., Tao Y., Li B., Chen Y.
Peking University, CN
Keywords: circuit simulation, compact modeling, device physics, non-classical MOSFETs
A carrier-based analytical model for undoped (lightly doped) UTB-SOI MOSFETs is derived by solving the Poisson equation coupled to the Pao-Sah current formulation. It is also shown that the predicted I-V characteristics are in complete agreement with 2-D numerical simulation results without any fitting term or parameter
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 637 - 640
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 1-4200-6184-4