Simulating CMOS Circuits Containing Multiple FET Types Including the Geometric Dependence of Correlation between FET Types

Assenmacher J.; Liang C-H; Park J-E; Park S-J; Wachnik R.; Watts J.

Simulating CMOS Circuits Containing Multiple FET Types Including the Geometric Dependence of Correlation between FET Types

Park J-E, Park S-J, Liang C-H, Assenmacher J., Watts J., Park J-E, Park S-J, Wachnik R.
IBM, US

Keywords: compact models, correlation, MOSFET

MOSFET device of similar design but different threshold voltage are often built on a single chip. It is important to be able to simulate with a compact model the variation of such devices including the correlation between them. This paper describes a method of simultating the variation included the geometric dependence of the correlations arising from common halo and separate Vt implants in the devices.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 562 - 565
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 1-4200-6184-4