Quantum Effects, Quantum Devices and Spintronics

Papers:

An Effective Potential Method for Including Quantum Effects Into the Simulation of Ultra-Short and Ultra-Narrow Channel MOSFETs

Akis R., Milicic S., Ferry D.K., Vasileska D., Arizone State University, US

Quantum effects are known to occur in the channel region of MOSFET devices, in which the carriers are confined in a triangular potential well at the semiconductor-oxide interface. Typically, these effects are quantified by a [...]

Towards a Compact Scattering Model for Nanoscale MOSFETs

Rahman A., Ren Z., Rhew J-H., Lundstrom M.S., Purdue University, US

A new compact model for nanoscale MOSFETs based on scattering theory is proposed for the full range of VGS and VDS covering sub-threshold, linear and saturation regions of operation. Quantum confinement and carrier degeneracy are [...]

The Use of Bohm Trajectories and the Effective Potential in Probing Quantum Mechanical Behavior in 2-D and Spintronic Sub-micron Devices

Shifren L., Akis R., Ferry D.K., Arizona State University, US

We utilize an effective potential to reproduce Bohm (quantum) trajectory behavior using purely classical trajectories. The effective potential is a novel method for including certain quantum phenomena into classical simulations by projecting the non-zero dimensions [...]

Spin Dependent Boundary Conditions and Spin Splitting in Cylindrical Quantum Dots

Li Y., Liu J-L., Voskoboynikov O., Liu J-L., Lee C.P., Sze S.M., National Chiao Tung University, TW

To study a spin dependence of the electron energy states in tree dimensional cylindrical semiconductor dots we consider theoretically the spin-orbit interaction impact on the electron quantum con...nement in the dots. We solve the problem [...]

An Approach to Quantum Correction in Monte Carlo Device Simulation

Winstead B., Tsuchiya H., Ravaioli U., University of Illinois at Urbana-Champaign, US

A particle-based approach coupled with quantum potential corrections is very attractive for practical simulation of nanoscale semiconductor devices. We present here a quantum correction approach derived from a simplification of the Wigner function transpo

The Quantum-Point-Contact Spin Filter

Gilbert M.J., Bird J.P., Arizona State University, US

We describe an electron filter that exploits the known transmission properties of quantum point contacts to allow local and tunable control of the spin polarization in a semiconductor. When properly configured, the conductance of this [...]

Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Published: March 19, 2001
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-0-4