Zhou X.
Nanyang Technological University, SG
Keywords: circuit simulation, compact model, deep-submicron MOSFETs, parameter extraction, technology development
This paper describes the ideas and philosophy behind a new compact model (CM) for deep-submicron MOSFETs, called Xsim, which has been developed from scratch over the past few years. Similarities to and differences from existing popular models are pointed out. The opinions on many controversial debates in the CM field are given. The ultimate goal of the CM development in the context of technology/circuit modeling and optimization is outlined.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 710 - 714
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9708275-7-1