Papers:
Automatic Device Design Optimization with TCAD Frameworks
A design optimization method is presented which utilizes automatic optimization capabilities within TCAD frameworks. This method is applied to doping profile optimizations of ultra-low-power CMOS transistors with 0.25 and 0.1 um gate lengths. Two different [...]
Top Down Design of MEMS
A top-down design flow for suspended MEMS is described, starting with schematic capture of a design topology, followed by behavioral simulation, layout generation, parasitic extraction, and final verification. Support for this flow requires a MEMS [...]
Ultrasmall Devices: Are We Ready for Quantum Effects?
It is clear that continued scaling of semiconductor devices will bring us to a regime with gate lengths of less than 70 nm within another decade. While there are questions to be answered in the [...]
Multiscale Modeling of Stress-Mediated Diffusion in Silicon, Ab Initio to Continuum
The introduction of new ‘back end’ materials, as well as the further scaling of silicon device dimensions, has raised the level of stress in dvice structures. Current engineering simulations of diffusion neglect the direct effect [...]
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-7-0