Mykhaylovskyy V.V., Russell K.C., Sugakov V.I.
Academy of Science of Ukraine, UA
Keywords: antisite defects, irradiation, reaction rate, self-organization, superlattice
A simulation of radiation-induced instability in binary semiconductors, such as GaAs, was fulfilled. The instability is connected with antisite defects accumulated. It was shown that the number of antisite defects in crystal under irradiation can significantly exceed their equilibrium concentration. We have found that the instability with respect to periodical defect distribution appears at some conditions of irradiation. The wavelength of the periodical distribution was estimated as 100 nm – 10 _m depending on crystal parameters.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 114 - 117
Industry sector: Advanced Materials & Manufacturing
Topic: Informatics, Modeling & Simulation
ISBN: 0-9666135-7-0