Lee J-H., Lee S-W., Kim K-D., Kim Y-W., Kong J-T., Lee J-H., Lee S-W., Kim K-D., Kim Y-W., Baek D-H.
Samsung Electronics Co.Ltd., KR
Keywords: calibration, diffusion, implantation, process simulation, silicidation
This paper proposes a novel methodology of systematic global calibration of a process simulator and validates its accuracy and efficiency with application to memory and logic devices. With 175 SIMS profiles which cover the whole range of conditions of implant and diffusion processes in the fabrication lines, the dominant diffusion phenomenon in each process temperature region has been determined. Using the dual-Pearson implant model and the fully-coupled diffusion model, the calibration was performed systematically. We applied the globally calibrated process simulation parameters to memory and logic devices to predict the optimum process conditions for target device characteristics.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 52 - 55
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-7-0