Ferry D.K.
Arizona State University, US
Keywords: discrete impurities, molecular dynamics, quantum effects, ultra-submicron devices
It is clear that continued scaling of semiconductor devices will bring us to a regime with gate lengths of less than 70 nm within another decade. While there are questions to be answered in the fabrication of these devices, the questions that must be addressed in simulation are no less difficult. Indeed, pushing to dimensional sizes such as this will probe the transition from classical to quantum transport, and many new issues will arise that must be addressed. In this paper, several of these issues, connected with the discreteness of point charges and with the onset of quantum effects will be discussed.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 11 - 14
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-7-0