TechConnect Proceedings Papers
The Effect of Microstructure on I-V Properties in Si/SiO2 Film
P-type Si(100) wafers with 8~11 Ω•cm resistivity were used as substrates. The Si substrates were put into the magnetron sputtering device (JGP560B), and three kinds of Si/SiO2 film were fabricated using the R.F magnetron sputtering [...]