Growth, Electrical and Optical Properties of SnO2:F on ZnO , Si and Porous Si Structure

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1- Instituto de Física, Universidade Federal da Bahia, Ondina, Salvador-Ba,40210-340, Brazil 2- CETEC-Universidade Federal do Recôncavo da Bahia, Cruz das Almas-Ba, 44380-000, Brazil 3- Department of Materials Science and Engineering, Royal Institute of Technology,SE-100 44 Stockholm, Sweden 4- Racah Institute of Physics and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904 Israel 5- Department of Physics, Göteborg University, SE-412 96 Göteborg,Sweden 6- Dept. of Science and Technology (ITN), Linköping University, SE-601 74 Norrköping, Sweden 7- Departamento de Física, Universidade Federal do Paraná, Curitiba-PR, 81531-990, Brazil. Fluorine Tin Oxide (FTO)- SnO2:F and Zinc Oxide (ZnO) are of great interest due to their broad range of technological application such as optoelectronic nanodevices. The ZnO nanorods are growth on different substrates by vapor-liquid-solid. The optical absorption of the ZnO and SnO2:F films were measured and calculated. The absorption and energy gap were calculated by employing a first-principle and a full-potential linearized augmented plane-wave (FPLAPW). Experiment and theory show a good aggreement when the optical absorption and optical energy gap are considered. A layer of FTO is deposited by spray pyrolysis on top of ZnO/Si or ZnO/porous Si in order to make lighting emitting devices. The morphology and roughness of the films are analyzed by Atomic Force Microscope (AFM) and Scanning Electron Microscope (SEM) techniques, before and after the FTO deposition. The electrical and optical properties are studied by characteristics curves I V, photoluminescence and electroluminescence.

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Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics
Published: May 3, 2009
Pages: 352 - 355
Industry sector: Advanced Materials & Manufacturing
Topic: Materials Characterization & Imaging
ISBN: 978-1-4398-1782-7