Photonic Materials & Devices – Page 28

Debunking an Urban Legend: Uniformity in Edge-Lit Frustrated TIR Displays

Selbrede M.G., Uni-Pixel Displays, Inc., US

Field sequential color display systems that utilize frustrated total internal reflection to activate pixels offer tremendous advantages over existing display technologies. Among these advantages are display transparency, imaging of infrared and visible light on the [...]

Thermal Noise and Bit Error Rate Limits in Nanoscale Memories

Forbes L., Mudrow M., Wanalertlak W., Oregon State University, US

Analysis of the effects of thermal noise in nanoscale memories is presented. A theoretical analysis of thermal noise is used to predict the number of bit errors per year caused by thermal noise.

Solar-Blind Dual-Band UV/IR Photodetectors Integrated on a Single Chip

Starikov D., Boney C., Pillai R., Bensaoula A., Integrated Micro Sensors Inc., US

Currently used flame detectors that are composed of discrete UV and IR solid-state components are bulky, sustain temperatures only below 125°C, and are not capable of detecting a multi-band optical signal with high spatial resolution. [...]

Phenyl–Terminated Self Assembled Monolayers on Si(100) for Low Voltage Transistor Applications

Sim A., Harper J., Zareie H., James M., Singh N.K., The University of New South Wales, AU

A key problem with the existing thin film organic field effect transistor is their large operating voltage (> 20 V) due to the relatively thick (>100 nm) dielectric layer (e.g. SiO2,) which restricts their in [...]

Electrical and Optical Nanosensors

Koeck A., Hainberger R., Heer R., Kast M., Maier T., Stepper C., ARC Seibersdorf Research GmbH, AT

Electrical and optical nanosensors for biomedical diagnostics and biochemical analytics are developed. The electrical and optical nanosensors employ nanobelt, nanowire and nanogap structures fabricated on silicon-on-insulator (SOI) wafers. In SOI wafers, a thin silicon layer [...]

Audio Signal Processing Using Mixed Hardware-Software Approach

Rominski A., Ciota Z., Napieralski A., Technical University of Lodz, PL

In this paper the possibilities of modern audio-processing systems have been described. One of the most important tasks is a proper definition of feature vectors. For example, the long-term spectra vector has been chosen as [...]

Novel FD SOI Devices Structure for Low Standby Power Applications

Ma M-W, Chao T-S., Kao K-S, Huang J-S, Lei T-F, National Chiao Tung University, TW

In this paper, fully depleted (FD) SOI devices with S/D extension shift and high-k offset spacer were investigated in detail. The results show that the S/D extension shift can decrease Ioff significantly to reduce standby [...]

Numerical Simulation of Drain-Current Transients and Current Compression in GaN MESFETs

Takayanagi H., Itagaki K., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analyses of GaN metal-semiconductor field effect transistors (MESFETs) are performed in which a three level compensation model is adopted for a semi-insulating buffer layer, where a shallow donor, a deep donor and a [...]

Theoretical Model for the Nanobundle Network Transistors Below and Above Percolation Limit

Pimparkar N., Guo J., Alam M.A., Purdue University, US

Recently, a lot of interest has been generated in the area of Macroelectronics with applications such as displays, chemical/biological sensors, photovoltaics and power electronics. Nanobundle network transistors (NBTs) have emerged as a viable, higher performance [...]

A Defect Model for Metallic Carbon Nanotubes in Cell-based Logic Circuits

Hashempour H., Lombardi F., Northeastern University, US

Carbon Nanotube based Field Effect Transistors (CNTFET) are promising nano scaled devices for implementing high performance, highly integrated, and low power circuits. The main component of a CNTFET is a single-wall carbon nanotube (SWCNT); its [...]