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HomeSectorsAdvanced Materials & Manufacturing

Sector: Advanced Materials & Manufacturing

Physical stability of nanoparticle dispersion

Fleury M., Lefeuvre Y., Tisserand C., Brunel L., Meunier G., Formulaction, FR
Nanoparticles applications in the industry are getting more and more important and concern many different fields (drug delivery, carbon nanotubes, display technologies, etc.). In the last decades a vast amount of scientific research has been [...]

Electromagnetic wave shielding effectiveness of SWNT-coated, transparent, conducting panels

Nam I.W., Lee H.K., Sim J.B., Choi S.M., KAIST, KR
Needs for electromagnetic wave shielding/absorbing have been increased in order to prevent electromagnetic interference, eavesdropping, and harmful effects to human bodies (Chung, 2001; Kim and Lee, 2008). Single-walled carbon nanotubes (SWNTs) have been well-known for [...]

Synthesis and characterization of La0.75Sr0.25Cr0.5Mn0.5O3- nanoparticles using combustion method

Reddy Channu V.S., Holze R., Walker Jr. E.H., Kalluru R.R., Technische universtat of Chemnitz, DE
La0.75Sr0.25Cr0.5Mn0.5O3-δ (LSCM) perovskite phase nanoparticles were successfully synthesized by solution combustion method using different carriers (NTP, oxalic acid, and citric acid) after calcination of fired gel at 1200 ºC for 7h. Scanning electron microscopy (SEM) [...]

Residual Stress Dependency on Wafer Location of Thin Film PECVD Silicon Nitride

Godin J.R., Won P.M. Nieva S.-H.P., Phong L.N., University of Waterloo, CA
The residual stress of use plasma enhanced chemical vapor deposition (PECVD) silicon nitride has been investigated in the past. The majority of these studies utilize bulk stress measurements through wafer curvature, assuming that the residual [...]

The Effects of gamma-ray Radiation on n-channel MOSFET

Iqbal M.A., University of the Punjab, PK
The response of an n-channel MOSFET to different energy gamma-ray irradiation is investigated as a function of dose rate. The radiation deposits energy by causing ionization in the oxide layer of the device. The ionization [...]

Uniqueness of intraband plasmon dispersion of a single layer graphene

Shin S.Y., Hwang C.G., Sung S.J., Lee P.L., Kim J.G., Kim N.D., Kim J.G., Kim N.D., Chung J.W., Pohang University of Science and Technology, KR
we studied the dispersion of intraband plasmon excitation of a single layer graphene(SLG) formed on 6H-SiC(0001) surface by using high-resolution electron energy loss spectroscopy. The dispersion w(q) measured from SLG appears to be quite different [...]

Influence of oxygen vacancies on electronic and magnetic

Srinivas K., Venugopal Reddy P., Osmania University, IN
This original experimental research work foused on Ni doped SnO2 diluted magnetic nanorods with various invetigated results. A careful analysis has been done to understand phase purity, distribution of oxygen vacancacies and surface effects. In [...]

Effect of surface reconstruction on the growth of self-assembled Ag nanostructures on Si(111) surfaces

Goswami D.K., Indian Institute of Technology Guwahati, IN
In this work, we have shown that how buried interface structure of Si(111) surface influence the growth of Ag nanostructure growth. Electronic growth modes for Ag on Si(111)-7x7 surface can only be observed if the [...]

Magnetic Nano-Structures Growing by Laser Ablation Deposition

Allocca L., Bonavolontà C., Morone A., Valentino M., Verrastro M.F., Viggiano V., CNR, IT
Results of SmCo nanostructures growing by laser ablation deposition are presented. The magnetic nanostructures are deposited on Silicum (111) and on polymer makrolon substrates. The laser ablation magnetic nanostructures properties are performed using electron scanning [...]

Development of the high performance GFRP with multiwall carbon nanotubes

Tarumoto N., Hodogaya chemical Co., Ltd, JP
Owing to the structural and mechanical properties of multiwall carbon nanotubes (MWCNTs), composites of MWCNTs are studied. However there is are few reports describing that MWCNTs without chemical modification is effective to mechanical properties of [...]

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