Advanced Materials & Manufacturing – Page 178

Nanoelectronic SET-based core for Network-on-chip architectures

Pes B.S., Guimaraes J.G., da Costa J.C., University of Brasilia - UnB, BR

Nanoelectronics is a very promising step the world of electronics is taking. It is proved to be more efficient than the microelectronic approaches currently in use, mainly in terms of area and energy management. A [...]

Surface Passivation of GaAs Nanowires Ensembles for Photovoltaic Applications

Chia A.C.E., LaPierre R.R., McMaster University, CA

Fabrication, electrical characterization and analytical modeling of an AlInP-passivated GaAs NW ensemble is presented. Novel processing steps were used to fabricate NW ensemble devices which were subsequently characterized electrically and fit with an analytical model, [...]

Electro-thermal aspects in carbon based interconnects

Verma R., Bhattacharya S., Mahapatra S., Indian Institute of Science, IN

The tremendous rise in Joule-heating in conventional ICs has led down ITRS to ensure on material alternatives that surpasses break-down current density and thermal conductivity (κ) beyond room temperature (RT). In recent years, suspended metallic [...]

Mid-IR integrated nanophotonics for chip-scale quantum optics applications

Buchwald W., University of Massachusetts Boston, US

A mid-IR nanophotonic architecture based on inter-sub-band transitions, along with experimental verification of the use of surface depletion as a means to control the host materials absorption properties is presented. Finite element simulations suggest this [...]

Doping-less Bipolar Transistor with fT Surpassing that of Conventional BJT

Nadda K., Jagadesh Kumar M., Indian Institute of Technology Delhi, IN

An innovative ultrathin SOI based bipolar charge plasma transistor BCPT for RF circuit applications is presented in this paper. The proposed device structure exhibits high cut-off frequency and an improved current drive while still maintaining [...]

Performance Comparison of Non-planar MOSFETs

Liao Y.-B., Chiang M-H, Hsu W.-C., National Ilan University, TW

To gain insights into device variability, device scalability and even circuit performance, more comprehensive simulation data are presented. FinFET shows the highest transconductances corresponding to aforementioned highest IDLIN and IDSAT. Regarding process variation, same W¬Si/D [...]

Report on the Atomically Precise, No Interface, Device Regime Workshop

Randall J.N., Ballard J.B., Owen J.H.G., Manning S.D., Zyvex Labs, US

The paper will present the findings of a workshop held in June 2012 at NIST to explore a new device regime with no materials interfaces and atomically precise placement of dopant atoms. The participants concluded [...]

Detection of diffused III-V materials in high-k oxides during atomic layer deposition and annealing

Cabrera W., Dong H., Brennan B., O’Connor É., Carolan P., Galatage R., Monaghan S., Povey I., Hurley P.K., Hinkle C.L., Chabal Y., Wallace R.M., University of Texas at Dallas, US

In this study we look at the impact of ALD HfO2 and Al2O3 on both InGaAs and InP substrates, with the aim of determining if there is any diffusion of substrate atoms into the high-k [...]

Nano Electronics & Photonic Materials & Devices

A Low Cost, Modular and Reconfigurable Manufacturing Cell for Construction of Heterogeneous Micro-Nano Systems

Das A.N., Savoie S., University of Texas at Arlington Research Institute (UTARI), US

This abstract presents a novel flexible manufacturing approach using modular robotic manipulators that can be quickly and easily configured for on-demand, on-site prototyping or pilot production. The modular and reconfigurable manufacturing cell or MRMC implements [...]