García-Loureiro A.J., Pena T.F., Prat Viñas Ll.
Univ. Santiago de Compostela, ES
Keywords: finite element, Gradual HBT, parallel, simulation, solvers
In this work we present the results of the simulation of AlxGa1-xAs/GaAs gradual heterojunction bipolar transistor using a parallel three-dimensional semiconductor device simulator. This simulator is based on drift-diffusion transport model. In order to solve the systems of linear equations we have tested different methods of domain decomposition, which present great advantages as opposed to the classic methods, as regards to speed and memory requirements. One considerable advantage of the simulator is that it has been implemented using C and Fortran together with the standard MPI message passing library, so obtaining a portable parallel code for the majority ofcurrent architectures. We have shown measures of the parallel execution time and different electrical results.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Published: March 19, 2001
Pages: 506 - 509
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-0-4