The Effect of a Multiple Carrier Model of Interface Trap Generation on Lifetime Extraction for MOSFETs

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An isotope effect in the slope of the substrate current versus lifetime requires a model beyond the standard single carrier lucky electron model typically used for MOSFET lifetime extrapolation. A multiple scattering model is developed which allows us to explain this effect. A nonlinearity in the drain current vs. device lifetime curve similar to the one predicted by our model has already been observed by the IBM group.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 576 - 579
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-7-1