McMahon W., Matsuda K., Lee J., Hess K., Lyding J.
University of Illinois, US
Keywords: deuterium, interface state generation, lifetime extrapolation
An isotope effect in the slope of the substrate current versus lifetime requires a model beyond the standard single carrier lucky electron model typically used for MOSFET lifetime extrapolation. A multiple scattering model is developed which allows us to explain this effect. A nonlinearity in the drain current vs. device lifetime curve similar to the one predicted by our model has already been observed by the IBM group.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 576 - 579
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-7-1