Arora G., Monika M., Chaujar R.
Delhi Technological University, IN
Keywords: ATLAS, dual metal gate, gate work function engineering, heat capacity, heat conductivity, lattice temperature, modelling, recessed channel, simulation, Thermal Analysis
This paper discusses the thermal analysis of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET involving an RC and GEWE design integrated onto a conventional MOSFET. Furthermore, it focuses on the comparative study of conventional MOSFET with GEWE-RC MOSFET in terms of various thermal parameters such as lattice temperature, heat conductivity, heat capacity and impact generation rate. This paper thus optimizes and predicts the feasibility of a novel design, i.e., GEWE-RC MOSFET for high-performance applications where self-heating effects and thermal behavior is a major concern. TCAD simulations using ATLAS demonstrate that the GEWE-RC MOSFET structure exhibits significantly improved thermal performance, where low power consumption is required and in digital logic and memory applications where fast switching action of MOS is needed.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational & Photonics
Published: June 15, 2014
Pages: 85 - 88
Industry sector: Sensors, MEMS, Electronics
Topic: MEMS & NEMS Devices, Modeling & Applications
ISBN: 978-1-4822-5827-1