Gopireddy D., Takoudis C.G., Gamota D., Zhang J., Brazis P.W.
University of Illinois - Chicago, US
Keywords: electrical characterization, FETs, silicon nanoparticles
In an effort to assess their potential for future nanoelectronic devices, we have fabricated silicon nanoparticles field effect transistors with nanoparticles as the active channel. The nanoparticles of 10-20 nm diameters are grown on a 200 nm gate oxide film on a highly p-doped silicon wafer, which is used as a back gate substrate. Source and drain contacts were fabricated using conventional lithography techniques. The nanoparticles used in this study were deposited on silicon dioxide substrate by thermal decomposition of silane using Low Pressure Chemical Vapor Deposition. This route offers an excellent control over particle size and size distribution and density by varying the process parameters. The goal of this study is to show the semiconducting nature of the nanoparticles and to characterize the performance of nanoparticle transistors. The source-drain current through the devices is measured at room temperature as a function of the bias voltage and the gate voltage. Based on the transfer characteristics obtained, the carrier density and the mobility of the charge carries are estimated. We will present the electrical characteristics of nanoparticles as a function of their density and size. The devices fabricated show good performance characteristics indicating potential for applications in nanoelectronics.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 7, 2006
Pages: 308 - 310
Industry sector: Advanced Materials & Manufacturing
Topic: Nanoparticle Synthesis & Applications
ISBN: 0-9767985-6-5