Zemliak A., Celaya C., Garcia R.
Puebla Autonomous University, MX
Keywords: modeling, numerical methods, Semiconductor microwave devices, simulation, structure optimization
On the basis of an IMPATT diode complex mathematical model and an optimization procedure, results are presented for a diode structure analysis and optimization suitable for a pulsed-mode 2 mm silicon diode. The complex model includes the electrical model based on continuity equations and thermal model based on the thermoconductivity equation solution. The energy characteristics of the semiconductor structures for high-power pulsed IMPATT diodes with a permanent and complex doping profile are optimized.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Pages: 427 - 430
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-4-6