Squeezed Electrons in GaN Quantum Wells

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We present an analytic theory of hot-electron transport in a GaN quantum well containing a large-enough electron concentration for strong electron-electron scattering to establish a drifted distribution. Novel behaviour includes the squeezed electron distribution and absolute cooling of the electron gas in a strong electric field when the electron temperature decreases with increase of the electric field. The current-voltage characteristics have the regions which obey the s-type dependence.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 412 - 415
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-7-0