Li Y.
Natl Nano Device Labs & Natl Chiao Tung Univ, TW
Keywords: energy states, InAs/GaAs, quantum dot, quantum ring, spin-orbit splitting
We investigate the effect of spin-orbit interaction on the electron energy states in nanoscale semiconductor quantum rings. The effective one-band Hamiltonian approximation with the spin-dependent Ben Daniel-Duke boundary conditions is formulated and solved numerically. Due to significant spin-orbit interaction in the nonsimply connected torus topology, experimentally measurable spin splitting can be observed in InAs/GaAs quantum ring. The spin splitting depends on the variations of geometric (dot- and ring-liked) structures. They are dominated by the inner radius, base radius, and height of the quantum ring. Under zero magnetic fields, it is found that quantum ring can produce ~ 2 meV spin splitting of excited electronic states which is substantially larger than that of quantum dot (~ 1meV).
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: March 7, 2004
Pages: 53 - 56
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Nanoelectronics
ISBN: 0-9728422-9-2