Tan P.B.Y., Kordesch A.V., Sidek O.
Silterra Malaysia Sdn Bhd, MY
Keywords: hook shaped, Idsat, MOS transistor, SPICE modeling, STI stress
In this paper, we demonstrated how we have modified the mobility equation to accurately model the I-V characteristics of I/O 2.5V MOS transistors. Our aim is to model the effect of mechanical STI stress in the direction of channel width. The average transverse compressive STI stress is itself a function of channel width. The stress is highest in long, narrow transistors. We added a physics-based exponential factor into the mobility equation to model the STI stress effect. The factor multiplies the SPICE mobility parameter, u0 and was derived based on the compressive STI stress effect in the direction of channel width (y-direction) on both NMOS and PMOS. The physical-based equation that we propose is an exponential function of channel width using two new parameters (styu01 and styu02) for tweaking the model to meet the hook shaped Idsat curve. The new factor is shown in Equation 1. Effective Mobility = ‘u0 – (styu01*exp(styu02*W))‘ (1)
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 678 - 681
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 1-4200-6184-4