Abebe H., Tyree V., Cockerham N.S.
USC/ISI MOSIS, US
Keywords: device modeling, MOSFET, parameter extraction, SPICE
The SPICE BSIM3v3.1 model parameters extraction and optimization strategy that we present here is applicable for a half micron technology and circuits operating at temperature ranging from -191 to 125 0C. The room temperature extraction and optimization strategy [1] is used as basis to extract the temperature dependent BSIM3v3.1 model parameters. The final extracted model parameters accuracy is evaluated by comparing simulations of a 31-stage ring oscillator with measured data.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling
Published: May 3, 2009
Pages: 647 - 650
Industry sector: Sensors, MEMS, Electronics
Topic: WCM - Compact Modeling
ISBN: 978-1-4398-1784-1