A novel MEMS vibration sensor for high acceleration am-plitudes was developed in silicon technology for tool state monitoring. According to the application-specific require-ments, the piezoresistive detection of vibration with polysilicon piezoresistors deposited on a thin silicon mem-brane is best suited. The technological parameters for the production of these strain-sensitive components were deter-mined by ICECREM, a simulation program for processing steps in semiconductor production. The vibration character-istics, i.e. sensitivity, range, and resonance frequency, were predicted by analyzes with the Finite Element Method. Thus, design optimization for an optimum mechanical performance was executed. The sensor was manufactured by a CMOS compatible process. The measured sensitivity of over 20µV/Vg corresponds well with the simulation re-sults, given the deviations of the sensor shape from the simulated values caused during the production process, and represents the highest known for this working range.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Pages: 593 - 596
Industry sector: Sensors, MEMS, Electronics
Topics: Chemical, Physical & Bio-Sensors, MEMS & NEMS Devices, Modeling & Applications