Wong P., Pejcinovic B.
Portland State University, US
Keywords: HBT, intermodulation distortion, modeling, silicon-germanium
Nominal transistor model parameters are found to be insufficient for reliably predicting intermodulation distortion (IMD) in heterojunction bipolar transistors. A method for optimizing the model parameters to give a more accurate simulation of IMD performance is outlined. Differences between transistor models are observed and analyzed by experimentally measuring IMD in silicon-germanium heterojunction bipolar transistors and comparing the results to computer simulations.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 301 - 304
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-7-0