Experimental evaluation of the dose distribution resulting from 3-dimensional deep x-ray lithography is often impractical. Computer modeling is a valuable tool for simulating this system. Preliminary simulations of 3-dimensional, deep, xray lithography exposures have been performed using the CXrL Toolset t2]. External computer programs have been developed to allow various manipulations of the resist volume between successive exposures. The first pair of routines allow a cubic volume of resist to be rotated by 90 degrees about either of two orthogonal axes. These have been used to simulate the exposures required to generate a “six-way cross”. First experiments producing a six-way cross have been conducted at the NSLS. The second set of routines supports the simulation of exposures where the x-rays enter the resist at nonnormal incidence. A “valve seat” with the geometry of a truncated pyramid has been simulated.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Published: April 6, 1998
Pages: 374 - 379
Industry sector: Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems