Fossum J.G., Trivedi V.P., Chowdhury M.M., Kim S-H, Zhang W.
University of Florida, US
Keywords: ballistic transport, double gate MOSFETs, nonclassical MOSFETs, ultra-thin body
Recent upgrades of UFDG, a process/physics-based compact model for nonclassical MOSFETs having ultra-thin Si bodies (UTB), are overviewed, and several recent applications of the model are presented, exemplifying the potential benefits of FinFETs in nanoscale CMOS circuits in which classical MOSFETs will not adequately perform.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 674 - 679
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9767985-8-1