Schottky barrier – TechConnect Briefs

Suppression of Variability in Metal Source/Drain SOI MOSFET with Partial Buried Oxide and δ-doping

Patil G.C., Qureshi S., Indian Institute of Technology Kanpur, IN

Recently, metal source/drain (S/D) dopant-segregated Schottky barrier (DSSB) SOI MOSFET has attracted the attention of researchers due to its planar structure, CMOS compatibility and reduced S/D series resistance at thin SOI film. However, employing dopant-segregation [...]

Nano-contacts and Nano-interconnects

Monty G., Underwriters Laboratories, and IEC TC113, US

This oral paper is the result of nearly 3 years of review and analysis of the state-of-the art of nano-contacts and nano-interconnects. An analysis of over 80 technical articles was performed, including interviews with some [...]

Subthreshold Operation of Schottky Barrier Silicon Nanowire FET

Yoo S.K., Ahn J.Y., Yang S., Lee J-H., Gwangju Institute of Science & Technology (GIST), KR

This paper presents that the sensitivity of Schottky barrier silicon nanowires FET (SB-SiNWFET) is strongly modulated by the applied back gate voltage, and reveals that the operation in the subthreshold regime gives the significant enhancement [...]

Solution-processed ZnO Single Nanoparticle Transistor Using Water-based Dispersions

Wolff K., Hilleringmann U., University of Paderborn, DE

The integration of printable transistors is an issue of recent work. Different proposals base on ZnO nanoparticle inks, which have to undergo a post-deposition annealing in order to improve the film quality and burn away [...]

Quasi-2D Surface-Potential Solution to Three-Terminal Undoped Symmetric Double-Gate Schottky-Barrier MOSFETs

Zhu G., Zhu Z., See G.H., Zhou X., Zhu G., Zhu Z., Lin S., Wei C., Zhang J., Srinivas A., Nanyang Technological University, SG

The quasi-2D method has been used to account for short-channel effects in PN-junction MOSFETs. Recently some authors applied the quasi-2D solution to SB MOSFETs to derive potential profiles. In this paper, an improved quasi-2D solution [...]

A Schrödinger-Poisson Solver for Modeling Carbon Nanotube FETs

John D.L., Castro L.C., Pereira P.J.S., Pulfrey D.L., Department of Electrical and Computer Engineering, CA

Carbon nanotubes are attracting great interest for their use in nanoscale electronic devices. Recent modeling efforts of carbon nanotube field-effect transistors (CNFETs) have been successful in examining the subthreshold behaviour of these devices through a [...]