Gogna M., AlAmoody F., Karmakar S., Papadimitrakopoulos F., Jain F.
University of Connecticut, US
Keywords: germanium FET, germanium quantum dots, quantum dot FET, self-assembly
This paper presents preliminary data on the transfer and output characteristics of a GeOXcladded Ge quantum dot (QD) gate Si MOSFET. The MOSFET is formed by depositing cladded QDs above the SiO2 gate insulator formed on p- Si region, sandwiched between n-type source and drain. Ge (~ 2 to 8 nm) nanoparticles, cladded with GeOX (~1nm) layers, are deposited using site-specific self-assembly. In addition, threshold shift in a nonvolatile memory structure, having cladded Ge dots, is also presented. The aim here is to fabricate floating QD gate high performance nonvolatile memory scalable to 22 nm processing.
Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics
Published: May 3, 2009
Pages: 163 - 165
Industry sector: Advanced Materials & Manufacturing
Topic: Nanoparticle Synthesis & Applications
ISBN: 978-1-4398-1782-7