Preparation and Characterization of Nanocrystalline GaP for Advanced Light Emissive Device Structures

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This work will review our efforts to advance quality of GaP nanoparticles for light emissive devices based on polymer/GaP nanocomposites. The choice of materials is based on their complementary behavior since each is a candidate for use in light emitters, waveguides, converters, accumulators and other planar, fiber or discrete micro-optic elements. Nanoparticles of GaP have been prepared by mild aqueous synthesis at different temperatures, modifications and compositions of the reacting components. The relevant spectra of photoluminescence (PL) and Raman light scattering (RLS), X-ray diffraction (XRD) and electron microscopy (TEM) of the nanoparticles prepared under different conditions have been compared with each other as well as with those from bulk single crystals. In this work the fractions of uniform GaP nanoparticles with bright luminescence at room temperature in a broad band with maximum at 3 eV have been obtained using yellow phosphorus instead of white or red one, low temperature synthesis (125oC instead of 200oC in the first syntheses), severe ultrasonic treatment and a number of other operations improving the quality of the nano-suspension. The above mentioned methods and results of the nanoparticles characterization, presented in this work clearly support this statement.

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Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2010: Advanced Materials, CNTs, Particles, Films and Composites
Published: June 21, 2010
Pages: 522 - 525
Industry sector: Advanced Materials & Manufacturing
Topic: Nanoparticle Synthesis & Applications
ISBN: 978-1-4398-3401-5