Song S.H., Ding Y., Kortshagen U., Bapat A., Campbell S.A.
University of Minnesota, US
Keywords: nanoparticle, schottky, silicon, transistor
A novel process has been developed by when large (~40 nm) cubic single crystals of silicon can be produced at high rates. In a previous paper we demonstrated that these particles can be used to make discrete silicon transistors on any type of substrate. Here we report at YbSi process that allows us to make n-channel devices as well so that complementary logic can be created. The process uses self aligning to make source, drain, and gate contacts to the 35 nm particle. Transistor results are shown and the current is gate controlled.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 20, 2007
Pages: 201 - 204
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices
ISBN: 1-4200-6182-8