Brecl K., Furlan J.
University of Ljubljana, SI
Keywords: extended Ebers-Moll model, modeling, multilayer devices
The interest in multilayer thin-film semiconductor structures is becoming bigger day by day. For multilayer structures both, low-quality and good-quality materials are used. An extended Ebers-Moll model for simulating multiayer structures was developed. The standard Ebers-Moll model for a transistor structure was extended to be used for more junctions. In addition photogenerated current, recombination current in space-charge region and carrier multiplication are added to the model. This model is actually used for a four-layer structure but can be easily extended to be used for any multilayer semiconductor device.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 376 - 379
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-7-0