Nanoscale anisotropic thin films and multilayers are of most interest in surface science and nanotechnology. A widespread way to probe nanometric layers is to employ optical reflection methods. But the use of exact equations to resolve the inverse problem; i.e., to determine the parameters of layered structures from reflection characteristics, is rather complicated. A purpose of this paper is to investigate the reflection characteristics in the long-wavelength limit for an n-layer system of ultrathin anisotropic dielectric films on isotropic homogeneous substrates. We show that the accuracy of the long-wavelength approximation for nanoscopic anisotropic multilayers is quite satisfactory: if the maximum value of thickness over wavelength comprises a few hundredths then the errors of approximate formulas do not exceed a few percent. The most useful feature of obtained approximate expressions is that they are simply invertible, allowing a direct calculation of the parameters of ultrathin layers.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 8, 2005
Pages: 664 - 667
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Informatics, Modeling & Simulation