Lehmann S., Schroter M.
University of Technology Dresden, DE
Keywords: base resistance, bipolar transistor, compact modeling, SiGe HBT
Existing equations for describing the layout dependent base resistance are improved and extended for heterojunction bipolar transistors (HBTs) in advanced process technologies. The new equations have been developed using quasi-3D device simulation and have been verified for a variety of layout and technology parameters.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 795 - 800
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 978-1-4200-8505-1