Yuan H-C, Roberts M.M., Savage D.E., Lagally M.G., Ma Z., Celler G.K.
University of Wisconsin-Madison, US
Keywords: elastic strain sharing, nanomembrane, Si, SiGe, transferable
We demonstrate the fabrication of free standing Si, SiGe, and Si/SiGe/Si membranes and the ability to transfer them onto various kinds of host substrates. In addition to the unstrained Si, SiGe membranes, strained Si is realized from Si/SiGe/Si film stack through elastic strain sharing between SiGe alloy and Si layers. We have fabricated thin-film transistors (TFTs) using either high-temperature or low-temperature process on the transferred membranes and demonstrate high current drive capability. This technique also enables numerous possibility of hetero-material integration.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 7, 2006
Pages: 68 - 71
Industry sector: Advanced Materials & Manufacturing
Topic: Nanoelectronics
ISBN: 0-9767985-6-5