Cheng H-W
National Chiao Tung University, TW
Keywords: 16-nm, digital circuit, electrical characteristics, modeling, Multi-Gate-and-Multi-Fin Device, TCAD simulation
In this work, we estimate electrical characteristics including threshold voltage (Vth) and gate capacitance (Cg) of 16-nm-gate multi-gate-and-multi-fin FETs, and delay time of an inverter and static noise margin (SNM) of a 6T SRAM. Large-scale random-dopant-induced fluctuations of the aforementioned characteristics are further discussed with respect to different fin aspect ratio (AR = the fin height / the effective fin width), where the device characteristics are obtained by solving a set of 3D density-gradient equations coupled with Poisson equations as well as electron-hole current continuity equations [3] under our parallel computing system [4]. Notably, an experimentally validated simulation [5] is also conducted to investigate the fluctuation property.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 721 - 724
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Informatics, Modeling & Simulation
ISBN: 978-1-4398-3402-2