Determination of Low-Frequency Noise Spectrum in Ion-sensitive Field Effect Transistors (ISFET’s) Based on a Physical Model for Drift

Collins S.D.; Jamasb S.; Smith R.L.

Determination of Low-Frequency Noise Spectrum in Ion-sensitive Field Effect Transistors (ISFET’s) Based on a Physical Model for Drift

Jamasb S., Collins S.D., Smith R.L.
Conexant Systems, US

Keywords: drift, flicker (1/f) noise, ISFET

A physical model for drift in pH-sensitive ISFET’s is employed to extract the inherent low-frequency noise power spectral density associated with these devices. The noise spectrum extracted from measured drift data demonstrates ideal 1/f noise behavior down to 10Hz. At lower frequencies, however, the resolution and accuracy of the ISFET is dominated by the drift behavior of the device. The distinction between drift and low-frequency noise is discussed based on the physical bases underlying each phenomenon.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Published: March 19, 2001
Pages: 514 - 517
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-0-4