Keywords: BSIM3, compact model, EKV, surface potential
Practical comparisons are made of three available or soon to be available compact MOS models—-SP2001 (surface potential 2001), EKV, and BSIM3. They are compared both in their DC and AC quality of fits to measured data, including Id-Vg, Id-Vd, Gm-Vg, Gds-Vd, and C-V curves. Also included are curves of Gms/Is versus log Is. The comparisons are meant to show weaknesses and strengths of each particular model so the user community can decide which model is appropriate for their use. Readers should note that the quality of fit is not the only criterion for choosing a compact model. Ease of parameter extraction, correlation of parameters, number of parameters, redundancy of parameters, and wild model behavior should also be considered. We touch on these features as well.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 649 - 652
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9708275-7-1