Due to the highly anisotropic behavior of ilicon bulk etching,there have been many publications on etch simulation and convex corner compensation for specific geometries. Our previous work introduced a general framework for algorithmically synthesizing mask layouts for wet etching.This paper extends that work to broader classes of corner compensation and demonstrates the encoding of a specific compensation structure uch that it may be used with other orientation or process parameters.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Pages: 124 - 127
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems