Iñiguez B., Hamid H.A., Jiménez D., Roig J.
Universitat Rovira i Virgili, ES
Keywords: ballistic transport, compact modeling, multiple-gate MOSFETs, quantum effects, SOI MOSFETs
In this work we present compact modelling schemes, for the undoped nanoscale multiple-gate MOSFET, suitable for design and projection of these devices. The proposed models have a physical basis and assume well-tempered multiple-gate MOSFETs; i.e., transistors with small shortchannel effects. We have considered different transport models (drift-diffusion and quasi-ballistic models); each one is valid for a certain range of channel lengths. The models are valid for all the operation regions (linear, saturation, subthreshold) and trace the transition between them without fitting-parameters. The characteristics obtained by this model agree with two- and threedimensional numerical simulations for all ranges of gate and drain voltages.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 52 - 57
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Nanoparticle Synthesis & Applications
ISBN: 0-9767985-3-0