Characterization of an ultra high aspect ratio electron beam resist for nano-lithography

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The performance of a new electron beam resist called SM20L-15 for use in electron beam lithography has been investigated. It was found that the clearing dose of this resist was 1025uC/cm2. The result is that 200nm features were fabricated, producing an aspect ratio of 10:1, therefore, the proximity effects commonly seen in electron beam lithography were considerably reduced.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 195 - 198
Industry sector: Advanced Materials & Manufacturing
Topicss: Advanced Manufacturing, Nanoelectronics
ISBN: 978-1-4398-3402-2