Bismuth Triiodide Sheets Assisted Growth of Cadmium Sulfide Binary Crystals and Branched Nanowires in Solution

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Semiconductor nanowires demonstrate their potential in the fabrication of electronic and optic nanodivices. As one of the most important II-VI group semiconductors, CdS nanowires have been synthesized by metal catalyzed vapor-liquid-solid (VLS) and vapor-solid (VS) methods at high temperature. In an effort to grow 2D featured CdS nanostructures at low temperature, we utilized bismuth triiodide (BiI3) sheets as 2D templates to confine the growth of nanowires on a 2D surface. BiI3 was selected due to its layered structure as well as the orderly polar Bi-I bonds exposed on the surface. To lower the reaction temperature, we adopted a solution reaction system which employs an organic solvent with a boiling point higher than 300°C. The cadmium acetate dihydrate [Cd (CH3COO)2•2H2O] and S powder were used as Cd source and S source correspondingly. A typical synthesis was performed at 185°C with reaction duration of 48 h. The growth of CdS nanowires with binary crystal and branch features was observiced. This formation is attributed to the coordination between the CdS crystal isotropic growth and the electrostatic force of the Bi-I layer. Further study is under way to synthesize orderly complex nanostructures with various chemical compositions. This will ultimately lead to the fabrication of nanodevices by this method.

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Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2008: Materials, Fabrication, Particles, and Characterization – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: June 1, 2008
Pages: 630 - 633
Industry sector: Advanced Materials & Manufacturing
Topics: Advanced Manufacturing, Nanoelectronics
ISBN: 978-1-4200-8503-7