We investigated the intermixing behavior of Co-Al thin layers by a molecular dynmaic simulation. Asymmetic intermixing was observed: a severe intermixing occurs when Co was deposited on Al substrate while an atomically sharp interface forms between Al film and Co substrate. This asymmetric intermixing behavior was clearly confirmed by low energy ion scattering analysis and MOKE measurement of 0.5 monolayer deposited on single crystal substrate. This behavior would be crucial in manufacturing a spin valve devices composed of very thin transition metal multilayers. We also suggested a novel process for high performance spin valve devices based on this asymmetic intermixing phenomena.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 7, 2006
Pages: 605 - 608
Industry sector: Advanced Materials & Manufacturing
Topics: Informatics, Modeling & Simulation