Aspect Ratio Improvement using the 2-step NERIME FIB Top Surface Imaging Process for Nano-lithography Applications

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The 2-step NERIME FIB top surface imaging process uses Ga+ ion implantation into resist followed by O2 plasma dry development using reactive ion etching. Previous work has demonstrated this process using 1.5um thick films of SPR660 at 100nm CDs. This paper demonstrates significant improvement in aspect ratio performance of the 2-step NERIME process, yielding aspect ratios of 21:1 and 90nm CD and profile control using 1.9um thick films of the DNQ/novolak based resist OIR-89. The results presented in this paper demonstrate the feasibility of using the 2-step NERIME process to pattern sub-100nm high aspect ratio resist features suitable for use in applications requiring high resolution and high aspect ratio lithography

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 8, 2005
Pages: 263 - 266
Industry sector: Sensors, MEMS, Electronics
Topics: Nanoelectronics, Printed & Flexible Electronics
ISBN: 0-9767985-2-2