Application of Magnetic Neutral Loop Discharge Plasma in Deep Quartz and Silicon Etching Process for MEMS/NEMS Devices Fabrication

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ULVAC’s Si deep etching technique has achieved high etching rate as high as 20 um/min as well as extremely high selectivity over resist mask as high as 100 or higher ensuring good etching performance.

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Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: May 8, 2005
Pages: 501 - 503
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: MEMS & NEMS Devices, Modeling & Applications
ISBN: 0-9767985-1-4