Morikawa Y., Hayashi T., Suu K., Ishikawa M.
ULVAC, Inc., JP
Keywords: deep etching, modulation, NLD, plasma
ULVAC’s Si deep etching technique has achieved high etching rate as high as 20 um/min as well as extremely high selectivity over resist mask as high as 100 or higher ensuring good etching performance.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: May 8, 2005
Pages: 501 - 503
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: MEMS & NEMS Devices, Modeling & Applications
ISBN: 0-9767985-1-4