Related to the dramatically smaller volume of microelectromecanical systems (MEMS), new methods in testing and qualification are needed. In single crystal silicon (SCSi) based devices, stress and loading in operation introduces defects during the MEMS life time and increases the risk of failure. Reliability studies on potential failure sources have an impact on MEMS design and are essential to assure the long term functioning of the device. In this paper, the application of advanced High Resolution X-ray Diffraction (HRXRD) methods in strain, defect and deformation analysis on MEMS is discussed. Stresses and defects are introduced in the devices during the fabrication process (DRIE, annealing, bonding) and influence the crystalline perfection and therefore have a direct impact on the mechanical properties of MEMS. The here applied in-plane diffraction technique allows to obtain additional information about the device stress state being not accessible by conventional HRXRD methods (out-off plane).
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 182 - 185
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems