This abstract shows a simple analytical model for turn-induced dispersion that captures an essential aspect of the transition field from uniform to circumferential that has been ignored in prior simple descriptions. The model applies directly to the high Peclet number regime, but identifies a new dispersion mechanism that is present in all regimes. The results of this model are compared with numerical simulation and experimental results. Comparisons to previous models show significant differences, almost 300%, in the expected variance for high Peclet complementary turns.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 1
Published: February 23, 2003
Pages: 214 - 217
Industry sectors: Medical & Biotech | Sensors, MEMS, Electronics
Topics: Micro & Bio Fluidics, Lab-on-Chip