Keywords: bipolar transistor, compact modeling, correlated noise, NQS effect, shot noise
A physics based approach to compact modeling of bipolar transistor noise is described. Frequency dependent intrinsic base current noise, its correlation to intrinsic collector current noise, avalanche of intrinsic collector current noise entering the collector-base junction space charge region as well as the inherent noise of the avalanche process are modeled in a modular way to facilitate turning on and off individual noise physics. Two dedicated noise parameters, a noise time describing the increase of intrinsic base current noise at high frequency, and correlation coefficient are used.
Journal: TechConnect Briefs
Volume: 4, Advanced Manufacturing, Electronics and Microsystems: TechConnect Briefs 2016
Published: May 22, 2016
Pages: 275 - 281
Industry sector: Sensors, MEMS, Electronics
Topic: WCM - Compact Modeling
ISBN: 978-0-9975-1173-4