Kwon O-S, Yoon I-T, Yoon S-H, Yoon S-I, Yoon I-T, Yoon S-H, Yoon S-I, Ha T-S, Yoon I-T, Yoon S-H, Yoon S-I, Won T-Y
Inha University, KR
Keywords: binding energy, exciton complex, quantum dot
Binding energies for an exciton (X) trapped in the two-dimensional quantum dot by a charge impurity located on the z axis at a distance from the dot plane are calculated by using the method of few-body physics. This configuration is called a varrier (D+,X) center or a barrier (A-,X) center. The dependences of the binding energy of the ground stat of the barrier (D+,X) and (A-,X) centers on the electron-to-hole mass ratio s and the dot radius R for a few values of the distance d between the fixed positive ion on the z axis and the dot plane are obtained.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 408 - 410
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-7-1