Hashempour H., Lombardi F.
Northeastern University, US
Keywords: CNTFET, defect modeling, metallic CNT, source-drain short FET
Carbon Nanotube based Field Effect Transistors (CNTFET) are promising nano scaled devices for implementing high performance, highly integrated, and low power circuits. The main component of a CNTFET is a single-wall
carbon nanotube (SWCNT); its conductance is determined by the so-called chirality of the tube and is extremely hard to control during manufacturing. Conducting nanotubes can lead to defective CNTFETs similar to source-drain short faults in Metal Oxide Semiconductor Field Effect
Transistors (MOSFET). This paper presents a model and a corresponding
detection technique for nano scaled defects arising from the presence of metallic carbon nanotubes. Using an optimal layout of CNTFET based circuits, such defects are modeled by traditional stuck-at faults (SSF) and detected by SSF test sets.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 47 - 50
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices
ISBN: 0-9767985-8-1