CNTs have gained significant attention due to their potential as an alternative nanomaterial to be utilized in micro/nano-scale electronics. To continuously improve the performance of CNT-based electronic devices, the CNTs and their manipulation methods must be further explored. Although a significant amount of research has investigated the electrical properties of CNTs, limited research has compared the properties of CNT transistors fabricated with different approaches. The purpose of this project is to compare the field effect of CNT transistors, based on two solution-based, inexpensive fabrication methods: dielectrophoretic deposition of aligned CNTs and self-assembly of random-network CNTs. The first method is achieved using DEP in the deposition and alignment of CNTs to fabricate transistors. In the DEP process, the CNTs are aligned across the electrodes by applying an AC voltage source. The DEP process has a selection effect on metallic and semiconducting CNTs as they react to an electric field differently. The second method is to fabricate transistors based on layer-by-layer self-assembly of CNT films. During this process, a random-network thin film of CNTs is generated with no selection of metallic or semiconducting CNTs. These results provide crucial information on how the CNTs can be used in future research and practical devices.
Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2012: Advanced Materials, CNTs, Particles, Films and Composites (Volume 1)
Published: June 18, 2012
Pages: 244 - 247
Industry sector: Advanced Materials & Manufacturing
Topics: Carbon Nano Structures & Devices